型号:

CPH6615-TL-E

RoHS:无铅 / 符合
制造商:SANYO Semiconductor (U.S.A) Corporation描述:MOSFET N/P-CH 30V 2.5/1.8A CPH6
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
CPH6615-TL-E PDF
产品目录绘图 CPH6 Package P, N, N/P, Dual N Channel Top
标准包装 1
系列 -
FET 型 N 和 P 沟道
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 2.5A,1.8A
开态Rds(最大)@ Id, Vgs @ 25° C 105 毫欧 @ 1.5A,10V
Id 时的 Vgs(th)(最大) -
闸电荷(Qg) @ Vgs 5.2nC @ 10V
输入电容 (Ciss) @ Vds 187pF @ 10V
功率 - 最大 900mW
安装类型 表面贴装
封装/外壳 SOT-23-6 细型,TSOT-23-6
供应商设备封装 6-CPH
包装 剪切带 (CT)
产品目录页面 1537 (CN2011-ZH PDF)
其它名称 869-1145-1
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